Samsung Fined $400M in FinFET Patent Dispute

Samsung Fined $400M in FinFET Patent Dispute. Top Two other companies like GlobalFoundries and Qualcomm were also found guilty, but Samsung is the only firm required to pay damages.

FinFETs the three-dimensional transistor structures that replaced conventional bulk silicon beginning in 2012, when Intel has launched its 22nm Tri-Gate FinFETs. FinFETs was a partnership between KAIST and Wonkwang University. In 2012, when Intel released its Tri-Gate transistors, Intel has paid $over 9M to KAIST since it’s introduced to FinFET technology. Samsung says “The FinFet technology we are using is our own technology developed by our employees and executives through studies.